 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage CGD914; CGD914MI PINNING - SOT115J DESCRIPTION PIN CGD914 1 2 and 3 5 7 and 8 9 input common +VB common output CGD914MI output common +VB common input DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. Both modules are electrically identical, only the pinning is different. 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 19.75 20.2 345 MAX. 20.25 21.5 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi supply voltage RF input voltage single tone 132 channels flat Tstg Tmb storage temperature operating mounting base temperature PARAMETER 40 20 MIN. 70 45 +100 +100 dBmV dBmV C C MAX. 30 V UNIT 2001 Nov 01 2 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz f = 45 to 100 MHz f = 100 to 800 MHz f = 800 to 870 MHz flatness narrow band s11 input return losses in each 6 MHz segment f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 550 to 650 MHz f = 650 to 750 MHz f = 750 to 870 MHz f = 870 to 914 MHz s21 s12 CTB phase response reverse isolation composite triple beat f = 50 MHz RFout to RFin 79 chs; fm = 445.25 MHz; note 1 112 chs; fm = 649.25 MHz; note 2 132 chs; fm = 745.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 745.25 MHz Xmod cross modulation 79 chs; fm = 55.25 MHz; note 1 112 chs; fm = 55.25 MHz; note 2 132 chs; fm = 55.25 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz CONDITIONS CGD914; CGD914MI MIN. 19.75 20.2 0.2 0.25 0.6 0.45 20 20 18 16 15 14 14 10 21 21 20 19 18 17 16 14 45 TYP. 20 21 1 MAX. 20.25 21.5 1.5 0.25 +0.4 +0.2 0.1 +45 22 76 64 55 73 64 60 70 62 57 69 65 63 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dB dB dB dB dB dB dB dB dB 2001 Nov 01 3 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL PARAMETER CONDITIONS 79 chs; fm = 446.5 MHz; note 1 112 chs; fm = 746.5 MHz; note 2 132 chs; fm = 860.5 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz CSO Diff composite second order distortion (diff) 79 chs; fm = 150 MHz; note 1 112 chs; fm = 150 MHz; note 2 132 chs; fm = 150 MHz; note 3 79 chs flat; Vo = 44 dBmV; fm = 150 MHz 112 chs flat; Vo = 44 dBmV; fm = 150 MHz 132 chs flat; Vo = 44 dBmV; fm = 150 MHz NF noise figure f = 50 MHz f = 550 MHz f = 750 MHz f = 870 MHz d2 second order distortion note 4 note 5 note 6 Vo output voltage dim = 60 dB; note 7 dim = 60 dB; note 8 dim = 60 dB; note 9 Itot Notes total current consumption (DC) note 10 CGD914; CGD914MI MIN. 69 66 63 345 TYP. 2.5 2.5 2.6 3 360 MAX. 71 60 56 63 54 49 59 53 48 60 59 57 3 3 3.5 3.5 60 54 50 375 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBmV dBmV dBmV mA CSO Sum composite second order distortion (sum) 1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz. 3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz). 4. fp = 55.25 MHz; Vp = 60 dBmV; fq = 493.25 MHz; Vq = 60 dBmV; measured at fp + fq = 548.5 MHz. 5. fp = 55.25 MHz; Vp = 60 dBmV; fq = 691.25 MHz; Vq = 60 dBmV; measured at fp + fq = 746.5 MHz. 6. fp = 55.25 MHz; Vp = 60 dBmV; fq = 805.25 MHz; Vq = 60 dBmV; measured at fp + fq = 860.5 MHz. 7. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo 6 dB; fr = 549.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 538.25 MHz. 8. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo 6 dB; fr = 749.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 738.25 MHz. 9. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo 6 dB; fr = 860.25 MHz; Vr = Vo 6 dB; measured at fp + fq fr = 849.25 MHz. 10. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 01 4 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -60 MCD976 52 Vo (dBmV) 48 handbook, halfpage -60 MCD977 52 Vo (dBmV) 48 CTB (dB) -70 (1) Xmod (dB) -70 (1) -80 44 -80 44 -90 (2) (3) (4) (2) 40 -90 40 (3) (4) -100 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.2 Composite triple beat as a function of frequency under tilted conditions. Fig.3 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD978 52 Vo (dBmV) 48 handbook, halfpage -50 MCD979 54 (2) (1) (3) CSO (dB) -60 (1) CSO (dB) -60 Vo (dBmV) 50 (2) (3) -70 44 (4) 46 -70 (4) -80 40 42 -80 -90 38 -90 0 200 400 600 36 1000 800 f (MHz) -100 0 200 400 600 34 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.4 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.5 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 5 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -60 MCD980 48 Vo (dBmV) handbook, halfpage -60 MCD981 48 Vo (dBmV) CTB (dB) -70 (1) Xmod (dB) -70 (1) 44 44 (2) (2) -80 (3) (4) 40 -80 40 (3) -90 0 200 400 600 36 800 1000 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) (4) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.6 Composite triple beat as a function of frequency under flat conditions. Fig.7 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD982 48 Vo (dBmV) handbook, halfpage -50 MCD983 48 Vo (dBmV) CSO (dB) -60 (1) (2) (3) CSO (dB) -60 (2) (1) (3) 44 44 (4) -70 (4) 40 -70 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.8 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.9 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 6 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD984 52 Vo (dBmV) 48 handbook, halfpage -50 MCD985 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) -60 44 -70 (2) 44 (2) -70 (3) (4) 40 -80 40 (3) -80 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.10 Composite triple beat as a function of frequency under tilted conditions. Fig.11 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -50 MCD986 (1) (2) 52 Vo (dBmV) 48 handbook, halfpage -50 MCD987 52 Vo (dBmV) 48 (1) CSO (dB) -60 (3) CSO (dB) -60 (4) -70 44 -70 44 (2) -80 40 -80 (3) 40 -90 0 200 400 600 36 1000 800 f (MHz) -90 (4) 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.12 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.13 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 7 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -50 MCD988 48 Vo (dBmV) handbook, halfpage -60 MCD989 48 Vo (dBmV) CTB (dB) -60 (1) Xmod (dB) -70 (1) (2) 44 44 (2) -70 (3) (4) 40 -80 (3) 40 -80 36 -90 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.14 Composite triple beat as a function of frequency under flat conditions. Fig.15 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD990 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -50 MCD991 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -60 (2) (1) (3) 44 -70 40 -70 (4) 40 -80 36 -80 36 -90 0 200 400 600 32 1000 800 f (MHz) -90 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 112 chs flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 112 chs; flat (50 to 750 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.16 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.17 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 8 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD992 52 Vo (dBmV) 48 handbook, halfpage -50 MCD993 52 Vo (dBmV) 48 CTB (dB) -50 (1) Xmod (dB) -60 (1) (2) -60 44 (3) (4) -70 (2) 44 (3) -70 40 -80 (4) 40 -80 0 200 400 600 36 1000 800 f (MHz) -90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.18 Composite triple beat as a function of frequency under tilted conditions. Fig.19 Cross modulation as a function of frequency under tilted conditions. handbook, halfpage -40 MCD994 52 Vo (dBmV) 48 handbook, halfpage -40 MCD995 52 (2) (1) (3) CSO (dB) -50 (1) CSO (dB) -50 Vo (dBmV) 48 (2) -60 44 -70 40 (4) 44 -60 (3) (4) 40 -70 -80 36 -80 0 200 400 600 36 800 1000 f (MHz) -90 0 200 400 600 32 800 1000 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.20 Composite second order distortion (sum) as a function of frequency under tilted conditions. Fig.21 Composite second order distortion (diff) as a function of frequency under tilted conditions. 2001 Nov 01 9 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI handbook, halfpage -40 MCD996 48 Vo (dBmV) handbook, halfpage -60 MCD997 48 Vo (dBmV) CTB (dB) -50 (1) Xmod (dB) -70 (1) (2) 44 44 -60 (2) (3) (4) 40 -80 (3) 40 -70 36 -90 (4) 36 -80 0 200 400 600 32 1000 800 f (MHz) -100 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.22 Composite triple beat as a function of frequency under flat conditions. Fig.23 Cross modulation as a function of frequency under flat conditions. handbook, halfpage -50 MCD998 (2) (3) (4) (1) 48 Vo (dBmV) 44 handbook, halfpage -40 MCD999 48 Vo (dBmV) CSO (dB) -60 CSO (dB) -50 (2) (1) 44 -70 40 -60 (3) 40 -80 36 -70 (4) 36 -90 0 200 400 600 32 1000 800 f (MHz) -80 0 200 400 600 32 1000 800 f (MHz) ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz). (1) Vo. (2) Typ. +3 . (3) Typ. (4) Typ. 3 . Fig.24 Composite second order distortion (sum) as a function of frequency under flat conditions. Fig.25 Composite second order distortion (diff) as a function of frequency under flat conditions. 2001 Nov 01 10 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier PACKAGE OUTLINE CGD914; CGD914MI Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads D E Z p SOT115J A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yM B xM B b wM 2 3 5 7 8 9 c U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.5 b c D max. d E max. e e1 F L min. p Q max. q q1 q2 S U1 U2 W w x y 0.1 Z max. 3.8 mm 20.8 4.15 2.04 0.51 0.25 27.2 13.75 2.54 5.08 12.7 8.8 3.85 2.54 0.38 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-02-04 10-06-18 2001 Nov 01 11 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production CGD914; CGD914MI DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe 2001 Nov 01 12 property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. CGD914; CGD914MI Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 2001 Nov 01 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/06/pp14 Date of release: 2001 Nov 01 Document order number: 9397 750 08861 |
Price & Availability of CGD91401
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |